7 April 2005 Thick lattice-matched GaInNAs films in photodetector applications
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Proceedings Volume 5726, Semiconductor Photodetectors II; (2005); doi: 10.1117/12.591315
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States
Abstract
The dilute-nitride GaInNAs shows great promise in becoming the next choice for long-wavelength (0.9 to 1.6 μm) photodetector applications due to the ability for it to be grown lattice-matched on GaAs substrates. GaAs-based devices have several advantages over InP-based devices, such as substrate cost, convenience of processing, and optoelectronic band parameters. This paper will present results from the first high-quality thick GaInNAs films grown by solid state molecular beam epitaxy with a nitrogen plasma source and the first high efficiency photodetectors which have been fabricated from those materials. GaInNAs films up to 2 microns thick have been grown coherently on GaAs substrates. These films exhibit reasonable photoluminescence intensities at peak wavelengths of 1.22 to 1.13 μm before and after a rapid thermal anneal at a series of temperatures. PIN photodiodes with these thick GaInNAs films in the intrinsic regions show responsivity (better than 0.5 A/W at 1.064 μm), dark current (200 nA at -2 V), and signal-to-noise ratio (greater than 105) approaching those of commercially available InGaAs/InP devices. Furthermore, it will be shown that these devices show significantly lower dark current and higher signal-to-noise ratio than similar metamorphic InGaAs/GaAs structures.
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David Jackrel, Homan Yuen, Seth Bank, Mark Wistey, Junxian Fu, Xiaojun Yu, Zhilong Rao, James S. Harris, "Thick lattice-matched GaInNAs films in photodetector applications", Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); doi: 10.1117/12.591315; https://doi.org/10.1117/12.591315
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KEYWORDS
Indium gallium arsenide

Gallium arsenide

Photodetectors

Signal to noise ratio

Absorption

Annealing

LIGO

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