7 April 2005 Ultra-thin multi-element Si pin photodiode arrays for medical imaging applications
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Abstract
Results of comparative studies of opto-electrical properties of photodiode arrays built on 30-um, 75-um, and 100-um thick single Silicon dies are presented. The size of the square pixels varied from 1.5 mm to 250-um for different arrays with the gaps between adjacent elements as small as 20 um. The internal quantum efficiency was close to 100%, DC and AC cross talks were smaller than 0.01% within the spectral range 400 to 800 nm. The arrays were characterized with very low leakage currents and high shunt resistance - above 1 GΩhm. The features of the array structure are discussed for the first time.
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Bernd Tabbert, Bernd Tabbert, Christopher Hicks, Christopher Hicks, Ed Bartley, Ed Bartley, Hong Wu, Hong Wu, Richard Metzler, Richard Metzler, Alexander O. Goushcha, Alexander O. Goushcha, } "Ultra-thin multi-element Si pin photodiode arrays for medical imaging applications", Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); doi: 10.1117/12.589486; https://doi.org/10.1117/12.589486
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