31 March 2005 Electrical and optical property of ferroelectric BaTiO3:Eu
Author Affiliations +
Proceedings Volume 5728, Integrated Optics: Devices, Materials, and Technologies IX; (2005); doi: 10.1117/12.590364
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States
Abstract
We studied various electrical and optical properties of Europium (1 atomic %) incorporated BaTiO3 film on n-Si(100) substrate. The thin film structure was analyzed by X-ray diffraction. Film thickness and optical refractive index were measured with an ellipsometer. P-E hysteresis measurement shows the remnant polarization of 37 micro-C/cm2 in BaTiO3:Eu film. C-V measurements on the pure BaTiO3 film show recovery of capacitance across sweeping voltage ranges with a narrow transition zone due to the polarization change. On the other hand, C-V and I-V measurements on the BaTiO3:Eu film show that Europium incorporation increases positively charged states in the BaTiO3 layer such that BaTiO3:Eu/n-Si interface behaves like a leaky p-n junction.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yeonjoon Park, Alexander Grichener, Jacob Jensen, Sang H. Choi, "Electrical and optical property of ferroelectric BaTiO3:Eu", Proc. SPIE 5728, Integrated Optics: Devices, Materials, and Technologies IX, (31 March 2005); doi: 10.1117/12.590364; https://doi.org/10.1117/12.590364
PROCEEDINGS
6 PAGES


SHARE
KEYWORDS
Europium

Capacitance

Barium

Crystals

Titanium

Silicon

Optical properties

Back to Top