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31 March 2005 Optical parametric oscillator based on orientation-patterned GaAs
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We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal, 0.5-mm-thick, 5-mm-wide, and 11-mm-long, with a domain reversal period of 61.2 microns. By tuning either the near-IR pump wavelength between 1.75 and 2 microns, or the temperature of the GaAs crystal, the mid-IR output tuned between 2 and 11 microns, limited only by the spectral range of the OPO mirrors. The pump threshold of the singly-resonant OPO was 16 micro-J for the 6-ns pump pulses, and the photon conversion slope efficiency reached 54%. Also, we show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Konstantin L. Vodopyanov, Ofer Levi, Paulina S. Kuo, Thierry J. Pinguet, James S. Harris Jr., Martin M. Fejer, Bruno Gerard, L. Becouarn, and Eric Lallier "Optical parametric oscillator based on orientation-patterned GaAs", Proc. SPIE 5728, Integrated Optics: Devices, Materials, and Technologies IX, (31 March 2005);

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