25 March 2005 Silicon nanowire active integrated optics
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Abstract
We employ ultranarrow silicon-on-insulator (SOI) waveguides to demonstrate significant Raman gain using low CW pump powers from a diode laser. Starting with measurements based on spontaneous Raman scattering in nanowire SOI waveguides, we obtain the parameters necessary to develop a useful numerical modeling tool for our system. This work shows clearly the feasibility of an SOI-based low-loss, low-power, on-chip Raman amplifier in the silicon nanowire system. We have also developed a rigorous coupled wave model to examine temporal effects in our Raman system.
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Richard M. Osgood, Richard L. Espinola, Jerry I. Dadap, Sharee J. McNab, Yuri A. Vlasov, "Silicon nanowire active integrated optics", Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); doi: 10.1117/12.598030; https://doi.org/10.1117/12.598030
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