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25 March 2005Silicon nanowire active integrated optics
We employ ultranarrow silicon-on-insulator (SOI) waveguides to demonstrate significant Raman gain using low CW pump powers from a diode laser. Starting with measurements based on spontaneous Raman scattering in nanowire SOI waveguides, we obtain the parameters necessary to develop a useful numerical modeling tool for our system. This work shows clearly the feasibility of an SOI-based low-loss, low-power, on-chip Raman amplifier in the silicon nanowire system. We have also developed a rigorous coupled wave model to examine temporal effects in our Raman system.
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Richard M. Osgood Jr., Richard L. Espinola, Jerry I. Dadap, Sharee J. McNab, Yuri A. Vlasov, "Silicon nanowire active integrated optics," Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); https://doi.org/10.1117/12.598030