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7 March 2005 Feasibility study of integration of electro-optic polymer waveguide device with MOSFET circuitry on silicon
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Abstract
Systematic development of electro-optic (EO) polymers is leading to optical and material properties such that they present an increasingly viable alternative to crystalline-based technologies for integrated optics. EO polymers demonstrate an inherent velocity match between radio-frequency and optical waves, making them excellent candidates for applications in high-speed telecommunication switching and optical interconnects for VLSI circuitry. In addition, EO polymer devices are relatively simple to fabricate at conditions compatible with microelectronics industry processes, making same-substrate integration of optical and electronic circuitry possible. In this paper, we describe two vertical integration schemes whereby a polymer-based electro-optic modulator may be controlled by metal-oxide semiconductor field effect transistor (MOSFET) circuitry. One scheme described is an insitu integration on the same silicon (Si) substrate. The second scheme is the integration of a modulator built on a flexible substrate with a MOSFET circuit on a second Si substrate. Both schemes have potential applications for integrated electro-optics.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susan Soggs, Haishan Sun, Antao Chen, Kian Kaviani, Nishant Bhatambrekar, Anna Pyajt, Jingdong Luo, Larry Dalton, Babak Parviz, and Alex Jen "Feasibility study of integration of electro-optic polymer waveguide device with MOSFET circuitry on silicon", Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); https://doi.org/10.1117/12.589857
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