7 March 2005 Scaling laws of nonlinear silicon nanophotonics
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Abstract
Scaling properties of two photon absorption, free carrier scattering, Raman scattering and Kerr effect in silicon waveguides is reported. It is shown that the dependence of minority carrier lifetime on waveguide dimensions has a profound impact on the performance of nonlinear optical devices built using silicon waveguides.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bahram Jalali, Bahram Jalali, Ozdal Boyraz, Ozdal Boyraz, Dimitri Dimitropoulos, Dimitri Dimitropoulos, Varun Raghunathan, Varun Raghunathan, } "Scaling laws of nonlinear silicon nanophotonics", Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); doi: 10.1117/12.590831; https://doi.org/10.1117/12.590831
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