25 March 2005 (AlGaIn)(AsSb) quantum well diode lasers with improved beam quality
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Type-I diode lasers based on the (AlGaIn)(AsSb) material family are ideally suited to cover the 2-3 μm wavelength range. In this paper recent progress in terms of output power, beam quality and wavelength tunability is reported, achieved for broad-area and tapered single emitters as well as for linear broad-area laser arrays. Special attention has been paid to the reduction of the fast axis far-field beam divergence, employing improved vertical waveguide laser designs. Furthermore, tapered diode lasers have been developed in order to increase the slow axis beam quality at high output powers. An improved beam quality is of particular importance as many applications, including coupling the laser output into an optical fiber or into an external resonator, require diode lasers with a low beam divergence and a high brightness rather than sheer output power.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Wagner, Joachim Wagner, Eva Geerlings, Eva Geerlings, Gudrun Kaufel, Gudrun Kaufel, Marc T. Keleman, Marc T. Keleman, Christian Manz, Christian Manz, Christian Pfahler, Christian Pfahler, Marcel Rattunde, Marcel Rattunde, Johannes Schmitz, Johannes Schmitz, } "(AlGaIn)(AsSb) quantum well diode lasers with improved beam quality", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.606623; https://doi.org/10.1117/12.606623

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