25 March 2005 AlGaN-based deep UV light emitting diodes with peak emission below 255 nm
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Abstract
We report on the growth and fabrication of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with peak emission of below 255 nm. In order to achieve such short wavelength UV LEDs, the Al mole fractions in the device layers should be greater than ~60%. This introdues serious challenges on the growth and doping of AlxGa1-xN epilayers. However, with the aid of a high-quality AlN template layer and refinement of the growth conditions we have been able to demonstrate UV LEDs emitting below 255 nm. The ratio of the intensity of the electroluminescence primary peak to that of the secondary peak (related to Mg deep levels) is ~ 18:1 at moderate injection current levels. Milliwatt level output powers have been achieved for these deep UV LEDs.
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Alireza Yasan, Ryan McClintock, Kathryn Mayes, Patrick Kung, Manijeh Razeghi, "AlGaN-based deep UV light emitting diodes with peak emission below 255 nm", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.597078; https://doi.org/10.1117/12.597078
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