25 March 2005 High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization
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Abstract
We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3x1011 cmHz1/2/W at 77K and 1.2x1010 cmHz1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.
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Stanley Tsao, Kan Mi, John Szafraniec, Wei Zhang, Ho-chul Lim, Bijan Movaghar, Manijeh Razeghi, "High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.597208; https://doi.org/10.1117/12.597208
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