25 March 2005 High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization
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Abstract
We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3x1011 cmHz1/2/W at 77K and 1.2x1010 cmHz1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stanley Tsao, Stanley Tsao, Kan Mi, Kan Mi, John Szafraniec, John Szafraniec, Wei Zhang, Wei Zhang, Ho-chul Lim, Ho-chul Lim, Bijan Movaghar, Bijan Movaghar, Manijeh Razeghi, Manijeh Razeghi, } "High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.597208; https://doi.org/10.1117/12.597208
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