Translator Disclaimer
25 March 2005 Linear optical response of Si1-xGex compounds
Author Affiliations +
Abstract
Si1-xGex is a good candidate as a substitute material for Si in a low-power and high-speed semiconductor device technologies. Optical devices, such as heterojunction bipolar transistors, are already in industrial production. The samples are grown on Si(001) with both n- and p-type impurities and with different Ge concentrations. The linear optical response of Si1-xGex is investigated theoretically using a full-potential linearized augmented plane wave method with respect to composition x. The calculated real and imaginary parts of the dielectric function ε(ω) = ε1(ω) + iε2(ω) were found to be in good agreement with recent spectroscopic ellipsometry measurements performed by Bahng et al., J. Phys.: Condens. Matter 13, 777 (2001). We also perform absorption measurements for different type of samples showing the variation of energy gaps as a function of Ge concentrations.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Ferriera da Silva, N. Souza Dantas, R. Ahuja, I. Pepe, Eronides Felisberto da Silva Jr., O. Nur, M. Willander, and C. Persson "Linear optical response of Si1-xGex compounds", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.591261
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top