Self-aligned 40-nm channel carbon nanotube field-effect transistors with subthreshold swings down to 70 mV/decade

Ali Javey; Damon Farmer; Roy Gordon; Hongjie Dai

doi:10.1117/12.584212

25 March 2005 Self-aligned 40-nm channel carbon nanotube field-effect transistors with subthreshold swings down to 70 mV/decade

Ali Javey, Damon Farmer, Roy Gordon, Hongjie Dai

Author Affiliations +

Proceedings Volume 5732, Quantum Sensing and Nanophotonic Devices II; (2005) https://doi.org/10.1117/12.584212
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Much progress has been made in recent years in the fabrication and understanding of the operations of Single-walled carbon nanotube (SWNT) field effect transistors (FETs). Nevertheless, it remains a challenge to develop highly scaled device structures for nanotube transistors and push to the performance limit of these molecular materials. The purpose of this work is to fabricate highly scaled SWNT field effect transistors (FETs) and approach the performance limit of carbon nanotube FETs.

Citation Download Citation

Ali Javey, Damon Farmer, Roy Gordon, and Hongjie Dai "Self-aligned 40-nm channel carbon nanotube field-effect transistors with subthreshold swings down to 70 mV/decade", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.584212

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