25 March 2005 ZnO thin film templates for GaN-based devices
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Abstract
GaN-based optoelectronic devices are plagued by a tendency to non-radiative transitions linked to defects in the active layers. This problem has its origin in (1) intrinsic factors such as GaN's relatively low exciton binding energy (~24meV) and (2) extrinsic factors including the poor availability of native substrates good enough to significantly suppress the defect density. Indeed, the quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since development of bulk GaN substrates of suitable quality has proven very difficult, a considerable amount of effort is also being directed towards the development of alternative substrates which offer advantages compared to those in widespread use (c-sapphire and 6H SiC). ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (~1.8%). In this paper, we discuss use of ZnO thin films as templates for GaN based LED.
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David J. Rogers, Ferechteh Hosseini Teherani, Alireza Yasan, Ryan P. McClintock, Kathryn Mayes, Shaban Ramezani Darvish, Patrick Kung, Manijeh Razeghi, Guy Garry, "ZnO thin film templates for GaN-based devices", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.596912; https://doi.org/10.1117/12.596912
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