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25 March 2005 ZnO thin film templates for GaN-based devices
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GaN-based optoelectronic devices are plagued by a tendency to non-radiative transitions linked to defects in the active layers. This problem has its origin in (1) intrinsic factors such as GaN's relatively low exciton binding energy (~24meV) and (2) extrinsic factors including the poor availability of native substrates good enough to significantly suppress the defect density. Indeed, the quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since development of bulk GaN substrates of suitable quality has proven very difficult, a considerable amount of effort is also being directed towards the development of alternative substrates which offer advantages compared to those in widespread use (c-sapphire and 6H SiC). ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (~1.8%). In this paper, we discuss use of ZnO thin films as templates for GaN based LED.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Rogers, Ferechteh Hosseini Teherani, Alireza Yasan, Ryan P. McClintock, Kathryn Mayes, Shaban Ramezani Darvish, Patrick Kung, Manijeh Razeghi, and Guy Garry "ZnO thin film templates for GaN-based devices", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005);


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