Paper
13 April 2005 1.55-μm light emission from InAs QDs embedded in a high-Q photonic crystal microcavity
Satoshi Iwamoto, Jun Tatebayashi, Tatsuya Fukuda, Toshihiro Nakaoka, Satomi Ishida, Yasuhiko Arakawa
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Abstract
We fabricated and characterized photonic crystal (PhC) microcavities containing InAs quantum dots (QDs) grown on (100) GaAs substrates. QD emission coupled with a PhC cavity mode at a wavelength of 1.55 μm was observed at room temperature. The cavity quality factor Q and its ratio to the mode volume V, Q/V, reach up to 2700 and 3400 x (n/λ)3, respectively. To our knowledge, these are the highest values for microcavities containing QDs emitting at wavelengths around 1.5 μm. The large enhancement of emission intensity at the cavity resonances was clearly observed. The enhancement factor is ~10-100, which depends on cavity modes and pump power density.
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Satoshi Iwamoto, Jun Tatebayashi, Tatsuya Fukuda, Toshihiro Nakaoka, Satomi Ishida, and Yasuhiko Arakawa "1.55-μm light emission from InAs QDs embedded in a high-Q photonic crystal microcavity", Proc. SPIE 5733, Photonic Crystal Materials and Devices III, (13 April 2005); https://doi.org/10.1117/12.591909
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KEYWORDS
Optical microcavities

Gallium arsenide

Indium arsenide

Photonic crystals

Polarization

Factor analysis

Quantum communications

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