13 April 2005 Three-dimensional structuring of silicon for photonic crystals with complete photonic bandgaps
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Proceedings Volume 5733, Photonic Crystal Materials and Devices III; (2005); doi: 10.1117/12.590551
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States
Abstract
The fabrication of three-dimensional photonic bandgap materials and the controlled incorporation of point, linear and planar defects into these crystals is a major challenge in materials research today. We show in this report that these purposes can be achieved by photoelectrochemical etching of lithographically prestructured silicon. Our advanced etching method allows the fabrication of three-dimensional photonic crystals with simple cubic symmetry. The performed calculations suggest complete bandgaps of 5% for the realized bulk structures. By lithographic prestructuring vertical line and planar defects can be induced, whereas horizontal planar defects can be created during the etching step. By combining both structuring techniques point defects can be fabricated.
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Sven Matthias, Frank Mueller, Ulrich M. Goesele, "Three-dimensional structuring of silicon for photonic crystals with complete photonic bandgaps", Proc. SPIE 5733, Photonic Crystal Materials and Devices III, (13 April 2005); doi: 10.1117/12.590551; https://doi.org/10.1117/12.590551
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KEYWORDS
Silicon

Photonic crystals

Etching

Modulation

Semiconducting wafers

Picosecond phenomena

Crystals

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