Optical transitions and carrier dynamics in self-organized InAs quantum islands grown on InP(001)

Bassem Salem; Gerard Guillot; Taha Benyattou; Catherine Bru-Chevallier; Georges Bremond; Christelle Monat; Michel Gendry; Anouar Jbeli; Xavier Marie; Thiery Amand

doi:10.1117/12.592221

4 April 2005 Optical transitions and carrier dynamics in self-organized InAs quantum islands grown on InP(001)

Bassem Salem, Gerard Guillot, Taha Benyattou, Catherine Bru-Chevallier, Georges Bremond, Christelle Monat, Michel Gendry, Anouar Jbeli, Xavier Marie, Thiery Amand

Author Affiliations +

Proceedings Volume 5734, Quantum Dots, Nanoparticles, and Nanoclusters II; (2005) https://doi.org/10.1117/12.592221
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The ground and excited state luminescent transitions in self-organized InAs/InP(001) quantum islands (QIs) grown in two different matrices (In_0.52Al_0.48As and InP), have been studied by cw photoluminescence (PL) and time resolved photoluminescence (TRPL). PL excitation (PLE) shows that the multi-component PL spectrum measured for the InAs/InAlAs QIs is associated to ground and related excited state transitions of QIs having monolayer-height fluctuation whereas for InAs/InP QIs the multi-component PL spectrum is only due to one ground state and their related excited states. This attribution is confirmed by the recombination life times measured by TRPL which are in the 1.2-1.4 ns range for the ground state transitions and in the 90-600 ps range for the excited state transitions.

Citation Download Citation

Bassem Salem, Gerard Guillot, Taha Benyattou, Catherine Bru-Chevallier, Georges Bremond, Christelle Monat, Michel Gendry, Anouar Jbeli, Xavier Marie, and Thiery Amand "Optical transitions and carrier dynamics in self-organized InAs quantum islands grown on InP(001)", Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); https://doi.org/10.1117/12.592221

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