4 April 2005 PbTe quantum dots: SiO2 multilayers for optical devices
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Abstract
Thin films of glass doped with PbTe quantum dots were successfully fabricated. The semiconducting quantum dots were grown by laser ablation of a PbTe target (99.99%) using the second harmonic of a Q-Switched Quantel Nd:YAG laser under high purity argon atmosphere. The glass matrix was fabricated by a plasma chemical vapor deposition method using vapor of tetramethoxysilane (TMOS) as precursor. The QD's and the glass matrix were alternately deposited onto a Si (100) wafer for 60 cycles. Cross-section TEM image clearly showed QD's layer well separated from each other with glass matrix layers. The influence of the ablation time on the size distribution of the quantum dots is studied. HRTEM revealed anisotropy in the size of the QD's: they were about 9nm in the high and 3-5 in diameter. Furthermore HRTEM studies revealed that the QD's basically growth in the (200) and (220) directions. The thickness of the glass matrix layer was about 20 nm. Absorption, photo luminescence and relaxation time of the multilayer were also measured.
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Eugenio Rodriguez, Eugenio Rodriguez, Ernesto Jimenez, Ernesto Jimenez, Lazaro A. Padilha, Lazaro A. Padilha, Cid B. de Araujo, Cid B. de Araujo, Carlos Lenz Cesar, Carlos Lenz Cesar, Luiz Carlos Barbosa, Luiz Carlos Barbosa, } "PbTe quantum dots: SiO2 multilayers for optical devices", Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); doi: 10.1117/12.587131; https://doi.org/10.1117/12.587131
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