Paper
4 April 2005 Photoluminescence characterization of quantum dot laser epitaxy
Yan Li, Y. C. Xin, Hui Su, Luke F Lester, Allen L. Gray, S. Luong, Kathy Sun, Z. Zou, John Zilko
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Abstract
The correlations between the photoluminescence (PL) wavelength, integrated intensity, peak intensity, and FWHM with laser diode performance such as the maximum gain, injection efficiency, and transparency current density are studied in this work. The primary outcome is that the variation in PL intensity within a wafer originates primarily from differences in the radiative and non-radiative recombination rates and not from dot density variation. PL generated from 980 nm wavelength pumping appears to give more consistent data in assessing the optical quality of quantum dots that emit in the 1300 nm from the ground state.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan Li, Y. C. Xin, Hui Su, Luke F Lester, Allen L. Gray, S. Luong, Kathy Sun, Z. Zou, and John Zilko "Photoluminescence characterization of quantum dot laser epitaxy", Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); https://doi.org/10.1117/12.597089
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconducting wafers

Transparency

Gallium arsenide

Quantum dots

Semiconductor lasers

Luminescence

Epitaxy

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