Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode

Chi-Kuan Lin; Gong-Ru Lin; Chun-Jung Lin; Hao-Chung Kuo; Chia-Yang Chen

doi:10.1117/12.587978

4 April 2005 Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO₂ based metal-oxide-semiconductor diode

Chi-Kuan Lin, Gong-Ru Lin, Chun-Jung Lin, Hao-Chung Kuo, Chia-Yang Chen

Author Affiliations +

Proceedings Volume 5734, Quantum Dots, Nanoparticles, and Nanoclusters II; (2005) https://doi.org/10.1117/12.587978
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Silicon defect and nanocrystal related white and red electroluminescences (EL) of Si-rich SiO₂ based on metal-oxide-semiconductor (MOS) diode using transparent electrode contact are reported. The 500nm-thick Si-rich SiO₂ film on n-type Si substrate is synthesized using multi-recipe Si-ion-implantation or plasma enhanced chemical vapor deposition (PECVD). After 1100°C annealing for 3 hrs, the PL of Si-ion-implanted sample at 415 nm and 455 nm contributed by the weak-oxygen bond and neutral oxygen vacancy defects is observed. The white-light EL spectrum was observed at reverse bias, which originates from the tunneling and recombination intermediate state of SiO₂:Si⁺ at a threshold current and voltage of 1.56 mA and 9.6 V, respectively. The maximum EL power of 110 nW is obtained at biased voltage of 25 V. The linear relationship between the optical power and injection current with a corresponding slope of 2.16 uW/A is obtained. The 4-nm nanocrystallite silicon (nc-Si) is precipitated in the 240nm-thick PECVD grown silicon-rich SiO₂ film annealed at 1100°C for 30 min with Indium-tin-oxide (ITO) of 0.8 mm in diameter, which contributes PL at 760 nm. The peak wavelength of the EL spectra coincides well with the PL. The threshold current and voltage are 86 V and 1.08 uA, respectively. The power-current (P-I) slope is determined as 697 uW/A. The carrier injection mechanism is dominated by Fowler-Nordheim(F-N) tunneling.

Citation Download Citation

Chi-Kuan Lin, Gong-Ru Lin, Chun-Jung Lin, Hao-Chung Kuo, and Chia-Yang Chen "Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO₂ based metal-oxide-semiconductor diode", Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); https://doi.org/10.1117/12.587978

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available