Spin-polarized semiconductor light sources

Pallab Bhattacharya; Michael Holub; Jonghyun Shin; Subhananda Chakrabarti

doi:10.1117/12.606609

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4 April 2005 Spin-polarized semiconductor light sources

Pallab Bhattacharya, Michael Holub, Jonghyun Shin, Subhananda Chakrabarti

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Proceedings Volume 5734, Quantum Dots, Nanoparticles, and Nanoclusters II; (2005) https://doi.org/10.1117/12.606609
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Spin-polarized light-emitting diodes and lasers are a promising technology for future high-speed optical communications with enhanced bandwidth and security. In such devices, circularly-polarized emission results from radiative recombination of spin-polarized carriers, which are injected from either a ferromagnetic metallic contact or magnetic semiconductor. Here we discuss the epitaxial growth and application of III-Mn-V diluted magnetic semiconductors and their nanostructures as injector layers in spin-polarized, surface-emitting diodes and lasers. A high polarization efficiency of 30% at 4.5 K is demonstrated in spin-LEDs having GaMnAs spin-injector layers and high-temperature operation (T < 180 K) is observed in spin-LEDs having a GaAs spin injector embedded with Mn-doped InAs quantum dot nano-magnets. Spin-polarized vertical cavity surface-emitting lasers having thin GaMnAs spin-injector layers have also been investigated.

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Pallab Bhattacharya, Michael Holub, Jonghyun Shin, and Subhananda Chakrabarti "Spin-polarized semiconductor light sources", Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); https://doi.org/10.1117/12.606609

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