Single mode 1.27-µm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers

Hao-Chung Kuo; Yi-An Chang; Ya-Hsien Chang; Jung-Tang Chu; Min-Ying Tsai; Shing-Chung Wang

doi:10.1117/12.583286

14 March 2005 Single mode 1.27-μm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers

Hao-Chung Kuo, Yi-An Chang, Ya-Hsien Chang, Jung-Tang Chu, Min-Ying Tsai, Shing-Chung Wang

Proceedings Volume 5737, Vertical-Cavity Surface-Emitting Lasers IX; (2005) https://doi.org/10.1117/12.583286
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than ~35% as the temperature raised from room temperature to 70oC. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of ~ 5.25 GHz/(mA)1/2. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25°C to 70°C.

Citation Download Citation

Hao-Chung Kuo, Yi-An Chang, Ya-Hsien Chang, Jung-Tang Chu, Min-Ying Tsai, and Shing-Chung Wang "Single mode 1.27-μm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers", Proc. SPIE 5737, Vertical-Cavity Surface-Emitting Lasers IX, (14 March 2005); https://doi.org/10.1117/12.583286

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