1 April 2005 Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared
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Dilute nitride type-II "W" structures have potential for lasing at 1.55 microns (on GaAs substrates) and in the mid-infrared (3-6 microns, on InP substrates). The former active regions utilize (In)GaAsN/GaAsSb/(In)GaAsN/GaAs quantum wells, whereas the latter are based on InAsN/GaAsSb/InAsN/GaInP structures. Following a review of the theoretical rationale, we will present some preliminary MOCVD growth results for the GaAs-based type-II structures, along with their characterization by x-ray, TEM, and photoluminescence. The experimental energy gaps corresponding to the layer compositions determined from characterization are in good agreement with calculations based on the 10-band k×p formalism.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry R. Meyer, Jerry R. Meyer, Igor Vurgaftman, Igor Vurgaftman, Anish A. Khandekar, Anish A. Khandekar, B. E. Hawkins, B. E. Hawkins, J. Y. Yeh, J. Y. Yeh, Luke J. Mawst, Luke J. Mawst, Thomas F. Kuech, Thomas F. Kuech, Nelson Tansu, Nelson Tansu, "Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.597115; https://doi.org/10.1117/12.597115

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