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1 April 2005 Fabrication of UV devices on various plane substrates
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Abstract
We have fabricated UV-emitters such as UV-light emitting diode (UV-LED) and UV-laser diode (UV-LD) on sapphire substrates. The combination of low-temperature-deposited AlN interlayer and lateral seeding epitaxy (Hetero-ELO) yielded crack-free and low-dislocation-density AlGaN. The light output power of GaN/AlGaN multi-quantum wells active layer based UV-LED monotonically decreased with the increase of threading dislocations. Moreover, we have demonstrated a UV-LD grown on this low-dislocation-density AlGaN. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm. We also present violet and UV-LEDs grown on ZrB2 substrate. The violet LED exhibits excellent linearity of L-I characteristic and sharp single spectrum, and vertical conduction through nitride and ZrB2 interface has been confirmed in the UV-LED. We also present the growth of AlN single crystals by sublimation method.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Motoaki Iwaya, Takeshi Kawashima, Kazuyoshi Iida, Akira Honshio, Yasuto Miyake, Hideki Kasugai, Krishnan Balakrishnan, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki "Fabrication of UV devices on various plane substrates", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.597124
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