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1 April 2005 GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-μm range
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Abstract
We review here our results concerning laser diodes emitting at 2.38 µm and 2.60 μm. We present an original method allowing to determine the monomolecular, radiative and Auger recombination coefficients A, B and C, as well as the transparency carrier density Ntr, the internal loss αi and the gain coefficient go from the differential efficiency and the threshold current density obtained with different laser diodes. We show how these parameters can be used to optimize the number of quantum wells and explain the differences existing between laser diodes emitting at 2.38 and 2.60 μm. At 2.38 μm, we obtained a threshold current density of 76 A/cm2 with a single quantum well laser diode and at 2.60 μm, a Jth of 152 A/cm2 with a double quantum well laser diode. These threshold current densities can be compared favorably to the best reported values in the 0.85-3.0 mu;m range.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yves Rouillard, J. Angellier, A. Salhi, P. Grech, and France Chevrier "GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-μm range", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.597118
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