1 April 2005 Very large arrays of individually addressable high-power single-mode laser arrays in the 800- to 1000-nm wavelength range obtained by quantum well intermixing techniques
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Abstract
Quantum well intermixing (QWI) of the facet regions of a semiconductor laser can significantly improve the COD of the device giving high kink power and high reliability. A novel epitaxy design incorporating a graded 'V-profile' layer allows for a reduced vertical far-field and simultaneously suppresses higher order modes to give high power operation. Furthermore, the 'V-profile' layer provides a robust design to improve the ridge etch tolerance to give excellent device performance uniformity across an array. Very large arrays of individually addressable lasers (up to 100 elements) are reported with small pitch size (~100 μm), high single mode power (up to 300 mW) and high uniformity.
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Stephen P. Najda, Stephen P. Najda, Gianluca Bacchin, Gianluca Bacchin, Bocang C. Qiu, Bocang C. Qiu, Chris J. M. Smith, Chris J. M. Smith, O. Vassalli, O. Vassalli, Marion Toury, Marion Toury, Stewart D. McDougall, Stewart D. McDougall, Craig J. Hamilton, Craig J. Hamilton, John H. Marsh, John H. Marsh, } "Very large arrays of individually addressable high-power single-mode laser arrays in the 800- to 1000-nm wavelength range obtained by quantum well intermixing techniques", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.588586; https://doi.org/10.1117/12.588586
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