Near-field and far-field dynamics of (Al,In)GaN laser diodes

Ulrich T. Schwarz; Markus Pindl

doi:10.1117/12.591044

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1 April 2005 Near-field and far-field dynamics of (Al,In)GaN laser diodes

Ulrich T. Schwarz, Markus Pindl

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Proceedings Volume 5738, Novel In-Plane Semiconductor Lasers IV; (2005) https://doi.org/10.1117/12.591044
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

For blue (Al,In)GaN laser diodes we measure the evolution of the laser beam during its propagation from near-field to far-field. We reconstruct the near-field phase distribution of the waveguide mode. The dynamic behaviour is a tilting of the phase front and a far-field beam-steering on a 10 ns to 100 ns time scale. These observations are discussed in the context of the carrier induced change of the refractive index associated with the antiguiding factor and of thermal dynamics.

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Ulrich T. Schwarz and Markus Pindl "Near-field and far-field dynamics of (Al,In)GaN laser diodes", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.591044

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