7 March 2005 Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN
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Abstract
Increasing emission power and efficiency in green light emitting diodes is one of the big challenges towards all-solid-state lighting. The prime challenge lies in the combination of extension of wavelength from 470 nm blue to 525 nm green while maintaining the emission power level. Commonly a steep decrease in power is observed. In a broad development effort we have been able to ameliorate that decrease significantly and obtain bare die performance at 525 nm of 1.6 mW at 20 mA for 350x350 μm2 dies. Here we discuss critical die performance and wafer yield aspects of our optimization approach to the active layer of the GaInN/GaN quantum wells.
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Christian Wetzel, Yong Xia, Theeradetch Detchprohm, Peng Li, Jeffrey S. Nelson, "Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.602144; https://doi.org/10.1117/12.602144
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