Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung-Tang Chu; Wen-Deng Liang; Chih-Chiang Kao; Hung-Wen Huang; Chen-Fu Chu; Hao-Chung Kuo; S. C. Wang

doi:10.1117/12.583288

7 March 2005 Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung-Tang Chu, Wen-Deng Liang, Chih-Chiang Kao, Hung-Wen Huang, Chen-Fu Chu, Hao-Chung Kuo, S. C. Wang

Author Affiliations +

Proceedings Volume 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX; (2005) https://doi.org/10.1117/12.583288
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Large-area (1000×1000 μm²) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.

Citation Download Citation

Jung-Tang Chu, Wen-Deng Liang, Chih-Chiang Kao, Hung-Wen Huang, Chen-Fu Chu, Hao-Chung Kuo, and S. C. Wang "Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); https://doi.org/10.1117/12.583288

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Light emitting diodes

Electrodes

Gallium nitride

Copper

Indium gallium nitride

Laser liftoff

Sapphire

Show All Keywords

Keywords/Phrases

Search In:

Publication Years