7 March 2005 Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
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Abstract
Large-area (1000×1000 μm2) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.
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Jung-Tang Chu, Jung-Tang Chu, Wen-Deng Liang, Wen-Deng Liang, Chih-Chiang Kao, Chih-Chiang Kao, Hung-Wen Huang, Hung-Wen Huang, Chen-Fu Chu, Chen-Fu Chu, Hao-Chung Kuo, Hao-Chung Kuo, S. C. Wang, S. C. Wang, } "Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.583288; https://doi.org/10.1117/12.583288
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