7 March 2005 Efficiency and reliability of AlInGaP LEDs grown on germanium substrates
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The use of Germanium as an alternative substrate for the growth of AlInGaP LEDs provides several technical advantages such as lower substrate costs and the possibility of fabricating As-free AlInGaP devices. The LED layer structures are grown in a multiwafer MOVPE reactor on 4 inch Ge substrates. The growth conditions, such as temperature and substrate orientation, influence the LED external efficiency and its degradation behavior. In particular, it is found that during growth Ge is incorporated into the layers, which strongly affects the LED efficiency. Moreover a defect annealing occurs during regular operation resulting in an increased efficiency. Electrical characterization as well as deep level transient spectroscopy are performed in order to characterize the nonradiative recombination centers. In addition a quantitative analysis of the external quantum efficiency, before and after degradation, is carried out and the relative change in the nonradiative recombination rate is evaluated.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paola Altieri, Paola Altieri, Arndt Jaeger, Arndt Jaeger, Peter Stauss, Peter Stauss, Torsten Pietzonka, Torsten Pietzonka, Klaus Streubel, Klaus Streubel, } "Efficiency and reliability of AlInGaP LEDs grown on germanium substrates", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.591508; https://doi.org/10.1117/12.591508


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