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7 March 2005 Light-emitting diodes based on InP quantum dots in GaP(100)
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Abstract
The growth, fabrication, and device characterization of the light-emitting diodes based on InP quantum-dot within a GaP matrix and on a GaP(100) substrate are described and discussed. The diode structures are grown using gas-source molecular beam epitaxy. Electroluminescence has been measured under a variety of bias conditions and temperatures. A green emission line at about 550 nm appears to result from carrier recombination in the strained InP wetting layer. Carrier recombination in the InP quantum dots results in red emission at about 720 nm.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fariba Hatami, Vincenzo Lordi, James S. Harris, and William Ted Masselink "Light-emitting diodes based on InP quantum dots in GaP(100)", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); https://doi.org/10.1117/12.591299
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