12 April 2005 Nonresonant random lasing from a dye-doped smectic A* scattering device
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Nonresonant random lasing from a dye-doped smectic A* scattering device is demonstrated. The field-induced scattering state of a low molar mass liquid crystal in the smectic A* phase is found to provide sufficient feedback to generate random lasing when a gain material, such as a fluorescent dye, is doped into the liquid crystal host. Furthermore, we found that the emission intensity of the random laser at a given excitation energy can be adjusted by altering the strength of the applied electric field so as to modify the scattering texture and consequently the transport mean free path. This change in the transport mean free path results in a change in the random lasing threshold. Large values for the transport mean free path, which indicate a weak scattering strength, result in large threshold values and vice-versa. Finally, we discuss the benefits of controlling the scattering strength with an applied electric field in terms of potential device applications.
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Stephen M. Morris, Alison D. Ford, Mikhail N. Pivnenko, Harry James Coles, "Nonresonant random lasing from a dye-doped smectic A* scattering device", Proc. SPIE 5741, Emerging Liquid Crystal Technologies, (12 April 2005); doi: 10.1117/12.593912; https://doi.org/10.1117/12.593912


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