6 May 2005 Debris mitigation and cleaning strategies for Sn-based sources for EUV lithography
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Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005); doi: 10.1117/12.619568
Event: Microlithography 2005, 2005, San Jose, California, United States
Abstract
The EUV source is an essential part of an EUV lithography exposure tool. All EUVL sources, and especially Sn-based sources, not only generate the desired radiation at a wavelength of 13.5 nm but also produce debris that limits the lifetime of the collecting optics in the lithographic system. In order to increase the lifetime of these optics we have successfully demonstrated the feasibility of both debris mitigation and cleaning strategies. In this paper, we show the experimental results for different debris mitigation schemes as performed in cooperation with Philips Extreme UV. We performed our experiments under realistic conditions: samples that closely resemble the optics in the EUV lithography set-up and positioned at realistic distances and orientation to the Sn-based EUV source. Using these schemes we were able to suppress both atomic debris and Sn-particles generated by the Sn-based EUV source with 4-5 orders of magnitude. Based on our experiments, we found a significant improvement in the lifetime of the EUV optics. In addition to avoiding the contamination of EUV optics, one can also clean the contaminated EUV optics. To do this, we have developed a technology for removing Sn (and C) using atomic hydrogen. We demonstrated Sn removal at a rate >200 nm/hour under a variety of experimental conditions (temperature, pressure). Our results demonstrate that combining debris mitigation schemes with cleaning schemes could lead to an EUV lithography system with acceptable operational lifetimes.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. W. Klunder, M. M. J. W. van Herpen, V. Y. Banine, K. Gielissen, "Debris mitigation and cleaning strategies for Sn-based sources for EUV lithography", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.619568; https://doi.org/10.1117/12.619568
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KEYWORDS
Tin

Hydrogen

Extreme ultraviolet lithography

Extreme ultraviolet

EUV optics

Chemical species

Argon

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