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6 May 2005 EPL performance in 65-nm node metallization technology and beyond
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Abstract
We evaluate electron projection lithography (EPL) performance for a via layer at 65-nm and 45-nm technology nodes through the fabrication of a via-chain test element group (TEG) using EPL/ArF mix-and-match (M&M) lithography. The via-chain is prepared by tow-layer metallization using a Cu/low-k single damascene process. Here, Metal 1 (M1) and Metal 2 (M2) are patterned by using an ArF scanner, and Via 1 (V1) is patterned by using an EPL exposure system. For the EPL performance evaluation at 65-nm technology node, we utilized transmission electron microscope (TEM) and confirmed that a 100-nm via-chain is successfully fabricated and a yield of 94% is achieved. For an EPL performance evaluation at 45-nm technology node, also by using TEM, we confirmed that fabrication of a 70-nm via-chain with reasonable quality is feasible although with a lower yield. For our next step we are planning to carry out an EPL performance at 32-nm technology node by printing a via layer and a metal layer using a corresponding via-chain TEG. Here, M1, V1 and M2 will be patterned by using the EPL exposure system. Although an EPL development at 32-nm technology node is still at its early stages, a via-hole resist pattern of 50 nm and a lines and spaces (L/S) resist pattern of 45 nm have almost been completed. These results suggest that EPL is quite promising for meeting the back-end-of-line (BEOL) process requirement for 65-nm, 45-nm and also for 32-nm technology nodes.
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F. Koba, T. Tsuchida, H. Sakaue, K. Koike, J. Yamamoto, N. Iriki, H. Yamashita, S. Kageyama, T. Nasuno, E. Soda, K. Takeda, H. Kobayashi, F. Shoji, H. Okamura, Y. Matsubara, and H. Arimoto "EPL performance in 65-nm node metallization technology and beyond", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.599257
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