6 May 2005 Laser-produced-plasma light source for EUV lithography
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The status of the next generation lithography laser produced plasma light source development at EUVA is presented. The light source is based on a Xenon jet target and a Nd:YAG driver laser. The laser, having a master oscillator power amplifier (MOPA) configuration, operates at 10 kHz repetition rate and generates an average output power of 1.5 kW. The fwhm pulsewidth is 6 ns. The EUV system currently delivers an average EUV source power of 9.1 W (2% bandwidth, 2π sr) with a conversion efficiency of 0.6 %. Based on the development it is concluded that solid-state Nd:YAG laser technology can be cost efficiently used to produce 10 W level EUV light sources. In order to generate an average power of 115 W for a future extreme ultraviolet (EUV) light source, however, the cost of a Nd:YAG based LPP source will be too high. Therefore RF-CO2 laser technology will be used. The designed CO2 driver laser system has a MOPA configuration. The oscillator has ns-order pulsewidth and the laser system operates at a repetition rate of 100 kHz. Due to its inert cleanliness Xenon droplets will be the target material.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georg Soumagne, Georg Soumagne, Tamotsu Abe, Tamotsu Abe, Takashi Suganuma, Takashi Suganuma, Yousuke Imai, Yousuke Imai, Hiroshi Someya, Hiroshi Someya, Hideo Hoshino, Hideo Hoshino, Masaki Nakano, Masaki Nakano, Hiroshi Komori, Hiroshi Komori, Yuichi Takabayashi, Yuichi Takabayashi, Tatsuya Ariga, Tatsuya Ariga, Yoshifumi Ueno, Yoshifumi Ueno, Yasunori Wada, Yasunori Wada, Akira Endo, Akira Endo, Koichi Toyoda, Koichi Toyoda, } "Laser-produced-plasma light source for EUV lithography", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.599333; https://doi.org/10.1117/12.599333

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