Line width variation with absorber thickness in extreme ultraviolet lithography

Young-Doo Jeon; Min-Ki Choi; Eun-Jin Kim; Jong-Sun Kim; Hye-Keun Oh

doi:10.1117/12.600406

6 May 2005 Line width variation with absorber thickness in extreme ultraviolet lithography

Young-Doo Jeon, Min-Ki Choi, Eun-Jin Kim, Jong-Sun Kim, Hye-Keun Oh

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.600406
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Selectivity of extreme ultra-violet lithography mask's material and thickness significantly influences on pattern formation. Since the reflectance changes periodically depending on absorber thickness, we investigated the absorber thickness effect on to near field and aerial image for 32 nm line/space and isolated pattern. We chose germanium and chromium as absorber materials. We also investigated the line width variation by absorber thickness change with different duty ratios. SOLID-EUV of sigma-C was used for this study.

Citation Download Citation

Young-Doo Jeon, Min-Ki Choi, Eun-Jin Kim, Jong-Sun Kim, and Hye-Keun Oh "Line width variation with absorber thickness in extreme ultraviolet lithography", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600406

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