6 May 2005 Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optic at the Advanced Laser Source
Author Affiliations +
Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005); doi: 10.1117/12.600620
Event: Microlithography 2005, 2005, San Jose, California, United States
Abstract
The level of flare present in a 0.3-NA EUV optic (the MET optic) at the Advanced Light Source at Lawrence Berkeley National Laboratory is measured using a lithographic method. Photoresist behavior at high exposure doses makes analysis difficult. Flare measurement analysis under scanning electron microscopy (SEM) and optical microscopy is compared, and optical microscopy is found to be a more reliable technique. In addition, the measured results are compared with predictions based on surface roughness measurement of the MET optical elements. When the fields in the exposure matrix are spaced far enough apart to avoid influence from surrounding fields and the data is corrected for imperfect mask contrast and aerial image proximity effects, the results match predicted values quite well. The amount of flare present in this optic ranges from 4.7% for 2 mm features to 6.8% for 500 nm features.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason P. Cain, Patrick Naulleau, Costas J. Spanos, "Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optic at the Advanced Laser Source", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600620; https://doi.org/10.1117/12.600620
PROCEEDINGS
11 PAGES


SHARE
KEYWORDS
Optical microscopes

Scanning electron microscopy

EUV optics

Optical testing

Lithography

Photomasks

Semiconducting wafers

Back to Top