6 May 2005 Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)
Author Affiliations +
Abstract
Three sets of projection optics (Sets 1, 2, and 3) were fabricated to the mark of a wave front error (WFE) of less than 1 nm. The RMS WFE is 7.5 nm for Set 1, 1.9 nm for Set 2, and at most 0.9 nm for Set 3. In addition, the RMS mid-spatial frequency roughness (MSFR), which affects flare, is 0.34 nm for Set 2 and 0.17 nm for Set 3. This paper discusses the current lithographic performance of HINA, especially the evaluation of flare and the replication of fine-pitch patterns. Several EUV masks were fabricated to evaluate the effects of flare and to replicate fine-pitch patterns. In the case of Set 2 optics, 90 nm lines and spaces were barely delineated using a bright-field mask due to the RMS MSFR of 0.34 nm, and replication of 70 nm lines and spaces were achieved using a dark-field mask. Since the RMS WFE and the RMS MSFR for Set 3 optics are half as much as that for Set 2 optics, the lithographic performance of HINA is markedly improved. 50 nm lines and spaces of non-chemically-amplified resist were delineated with the illumination condition of a partial coherence, σ, of 0.8 and 45 nm lines and spaces were delineated with the annular illumination condition of outer σ of 0.8 and inner σ of 0.5. In addition ultimate resolution of 30 nm lines and spaces of chemically-amplified resist was performed under the coherent illumination condition of σ of 0.0.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Oizumi, H. Oizumi, Y. Tanaka, Y. Tanaka, F. Kumasaka, F. Kumasaka, I. Nishiyama, I. Nishiyama, H. Kondo, H. Kondo, M. Shiraishi, M. Shiraishi, T. Oshino, T. Oshino, K. Sugisaki, K. Sugisaki, K. Murakami, K. Murakami, } "Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.599435; https://doi.org/10.1117/12.599435
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

EUV lithography optics for sub-9nm resolution
Proceedings of SPIE (March 16 2015)
Anamorphic high-NA EUV lithography optics
Proceedings of SPIE (September 04 2015)
Nikon EUVL development progress update
Proceedings of SPIE (March 17 2009)
EUV pattern shift compensation strategies
Proceedings of SPIE (March 20 2008)
Nikon EUVL development progress update
Proceedings of SPIE (March 20 2010)

Back to Top