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6 May 2005 Mask fabrication towards sub-10 nm imprint lithography
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Abstract
We report for the first time the use of orientation dependent etching (ODE) of (110) c-Si in sidewall thin film technology for imprint mask fabrication with low line edge roughness (LER) over a large area. Oxidation is used for sidewall thin film formation with a good critical dimension control. 2-dimensional oxidation effects are discussed. Features down to 12 nm have been fabricated successfully. Simulation shows that the fabricated oxide line is strong enough to imprint both thermoplastic and photo-curable imprint resists.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian Gu, Chun-Ping Jen, Qihuo Wei, Chiafu Chou, and Frederic Zenhausern "Mask fabrication towards sub-10 nm imprint lithography", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600207
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