Off-synchrotron at-wavelength EUV metrology

Andre Egbert; Stefan Becker; Boris N. Chichkov

doi:10.1117/12.597411

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6 May 2005 Off-synchrotron at-wavelength EUV metrology

Andre Egbert, Stefan Becker, Boris N. Chichkov

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Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.597411
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Compact extreme ultraviolet (EUV) laboratory sources are strongly required for the fast on-site characterization of optical components and for the precise calibration of EUV diagnostic instruments. The "EUV tube" promises to become an important tool for these applications. This source is based on the transfer of advanced microfocus x-ray tube technology into the EUV spectral range. This allows the realization of a flexible, debris-free, and long-term stable EUV source. Silicon targets are used to generate radiation at 13.5 nm. Detailed characteristics of the source performance are reported and different examples for off-synchrotron at-wavelength metrology are presented.

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Andre Egbert, Stefan Becker, and Boris N. Chichkov "Off-synchrotron at-wavelength EUV metrology", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.597411

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