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6 May 2005 One small step: world's first integrated EUVL process line
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The Intel lithography roadmap calls for Extreme Ultraviolet Lithography (EUVL) to be used for the 32 nm node. With the installation of the EUV Micro-Exposure Tool (MET) complete, Intel now has the world's first integrated EUVL process line including the first commercial EUV exposure tool. This process line will be used to develop the EUV technology, including mask and resist, and to investigate issues such as defect printability. It also provides a test-bed to discover and resolve problems associated with using this novel technology in a fab (not lab) environment. Over 22,000 fields have been exposed, the discharge-produced plasma light source has operated for 50,000,000 pulses, 8 masks have been fabricated, and 8 resists have been characterized. The MET combines high resolution capability with Intel's advanced processing facilities to prepare EUVL for high-volume manufacturing (HVM). In this paper we review the MET installation and facilities, novel capabilities of the linked track, data on optics quality and modeled tool capability, and the MET mask fabrication process. We present data on tool performance including printing 45 nm 1/2 pitch lines with 160 nm depth of focus and 27 nm isolated lines. We show tool accuracy and repeatability data, and discuss issues uncovered during installation and use.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeanette M. Roberts, Terence Bacuita, Robert L. Bristol, Heidi B. Cao, Manish Chandhok, Sang H. Lee, Eric M. Panning, Melissa Shell, Guojing Zhang, and Bryan J. Rice "One small step: world's first integrated EUVL process line", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005);


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