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6 May 2005 Radiation transport modeling for Xe and Sn-doped droplet laser-plasma sources
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Abstract
Detailed understanding of the complex UTA emission from Xe and Sn laser plasmas is imperative to the development of efficient 13.5 nm sources for EUVL. We are developing a comprehensive theoretical modeling approach to these sources, utilizing state-of-the-art hydrodynamic and radiation transport plasma codes. These models are specifically applied to Xe and Sn-doped microscopic droplet targets laser-plasmas irradiated with nanosecond laser pulses. The plasma expansion models are compared to experimental determinations of the plasma electron density distributions. The output of the radiation transport code is used to interpret details of the spectral emission measured from these plasmas over a broad range of parameters.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Moza Al-Rabban, Christian Keyser, Simi George, Howard Scott, Vivek Bakshi, and Martin Richardson "Radiation transport modeling for Xe and Sn-doped droplet laser-plasma sources", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.596767
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