6 May 2005 Simulation analysis of defect repair methods for EUVL Mo/Si multilayer mask blanks
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Abstract
The availability of defect-free masks is a critical concern in EUV lithography. An intensive investigation of defect repair methods for EUVL mask blanks is required because the mitigation of defects has turned out to be much more difficult than anticipated. We investigated the effect of four methods through accurate simulations employing the FDTD method: 1) scooping a multilayer for amplitude defects, 2) EB exposure for phase defects, 3) covering a defect with an absorber pattern, and 4) making intrusions in the absorber pattern near a defect. These methods create structural changes in the masks themselves. We calculated the aerial images of masks with such changes and compared them with that of a perfect mask. It was found that all the methods suppress the degradation in light intensity caused by defects. At the same time, each repair method has some limitations and factors that require special attention. Thus, it is important to choose the most suitable repair method for a given defect.
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Takeo Hashimoto, Iwao Nishiyama, "Simulation analysis of defect repair methods for EUVL Mo/Si multilayer mask blanks", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.599224; https://doi.org/10.1117/12.599224
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