Two-wave pattern shift aberration monitor for centrally obscured optical systems

Jason P. Cain; Gregory McIntyre; Patrick Naulleau; Adam Pawloski; Bruno La Fontaine; Obert Wood II; Costas J. Spanos; Andrew R. Neureuther

doi:10.1117/12.600399

6 May 2005 Two-wave pattern shift aberration monitor for centrally obscured optical systems

Jason P. Cain, Gregory McIntyre, Patrick Naulleau, Adam Pawloski, Bruno La Fontaine, Obert Wood II, Costas J. Spanos, Andrew R. Neureuther

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Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.600399
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

An aberration monitoring technique based on lateral shifts of two-wave interference patterns in centrally obscured optical systems is presented, and simulations are used to evaluate the performance of such a technique. The technique is being explored as a convenient means for monitoring the aberration level in the 0.3-NA Micro Exposure Tool (MET) optic over time. A binary mask was designed for observing phase differences across the MET optic on cut-lines at 0, 45, 90 and 135 degrees across the pupil. The mask consists of 5 line-and space patterns in a dark field that measure the side-to-side phase difference across the pupil at 7 equally spaced radial points extending from 35% to 95% of the pupil radius. For near on-axis illumination the blockage of the zero-order creates a two-wave, interferometric pattern at the wafer with half of the period expected under normal imaging conditions. The optical path difference between the two orders produces an image shift of one full period of the (frequency doubled) interference pattern per 360 degrees of side-to-side path difference. Shifts on the order of 5 to 20 nm are expected and are measured using a reference target of an array of 5 medium sized dots. Aerial image simulation is being utilized to predict the expected performance and to improve the initial design. The aberrations measured by interferometry are being used for this purpose. Also the quality of images at low partial coherence with the wavefront convergence present in the MET illumination is being studied. In addition to theory and simulation results, practical considerations in implementing this technique on actual lithography tools based upon MET-type optics are addressed, including pattern design, illumination characteristics, and data analysis.

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Jason P. Cain, Gregory McIntyre, Patrick Naulleau, Adam Pawloski, Bruno La Fontaine, Obert Wood II, Costas J. Spanos, and Andrew R. Neureuther "Two-wave pattern shift aberration monitor for centrally obscured optical systems", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600399

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KEYWORDS

Semiconducting wafers

Photomasks

Wavefronts

Wafer-level optics

Interferometry

EUV optics

Extreme ultraviolet lithography

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