Translator Disclaimer
10 May 2005 Application of 3D scatterometry to contacts and vias at 90nm and beyond
Author Affiliations +
Abstract
The challenging metrology application for scatterometry and CD-SEM is to accurately measure both CD and profile. To apply this metrology specifically to dual-damascene hole structures is critical for the back-end processing, in order to control both the CD and the process overall. This paper discusses applications of Optical Digital Profilometry-based scatterometry to the advanced 90nm node dual-damascene process. The application includes contact ADI, via AEI, via etch, and via fill. The results show that scatterometry can measure CD, as well as provide sidewall angle and profile information that is unavailable by CD-SEM. Correlations to CD-SEM and cross-sectional SEM are also presented. For future applications, scatterometry is a viable solution for 3D structures, and provides higher precision, and more metrology information than current metrology methods for critical dual-damascene processes.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacky Huang, Kelly Barry, Chih-Ming Ke, Burn Lin, and Allen Li "Application of 3D scatterometry to contacts and vias at 90nm and beyond", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.601023
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top