10 May 2005 Application of spectroscopic scatterometry method in hole matrices analysis
Author Affiliations +
Proceedings Volume 5752, Metrology, Inspection, and Process Control for Microlithography XIX; (2005); doi: 10.1117/12.599373
Event: Microlithography 2005, 2005, San Jose, California, United States
Abstract
This paper focuses on the capability of the spectroscopic scatterometry method to determine holes features parameters from experimental 3D-target. Scatterometry uses optical tools for spectra recording as ellipsometer form KLA TENCOR and a MMFE (Modal Method of Fourier Expansion) software tool including an advanced electromagnetic simulator and an optimization loop for data extraction. This study reports on 3D-MMFE regression of different dense holes square and rectangular matrix structures on the simplest structure-resist on silicon-to extract diameter, height of the holes. The holes diameter is from 90nm to 500nm, and the duty ratio is from 1:1 to 2:2 (CD/Space). To be close to real production stack the same matrices have been studied on more complex stack (close to via level with different dielectric material: FSG, dense SiOC). Finally this study is focused on an analysis on simulation and experiment of the relative sensitivity position of a hole inside the basic element of diffraction. That shows the possibility of scatterometry measurement in detecting via shift.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Quintanilha, J. Hazart, P. Thony, D. Henry, "Application of spectroscopic scatterometry method in hole matrices analysis", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.599373; https://doi.org/10.1117/12.599373
PROCEEDINGS
13 PAGES


SHARE
KEYWORDS
Scatterometry

Matrices

Critical dimension metrology

Spectroscopy

Scatter measurement

Silicon

Scanning electron microscopy

Back to Top