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10 May 2005 CD SEM metrology macro CD technology: beyond the average
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Downscaling of semiconductor fabrication technology requires an ever-tighter control of the production process. CD-SEM, being the major image-based critical dimension metrology tool, is constantly being improved in order to fulfill these requirements. One of the methods used for increasing precision is averaging over several or many (ideally identical) features, usually referred to as "Macro CD". In this paper, we show that there is much more to Macro CD technology- metrics characterizing an arbitrary array of similar features within a single SEM image-than just the average. A large amount of data is accumulated from a single scan of a SEM image, providing informative and statistically valid local process characterization. As opposed to other technologies, Macro CD not only provides extremely precise average metrics, but also allows for the reporting of full information on each of the measured features and of various statistics (such as the variability) on all currently reported CD SEM metrics. We present the mathematical background behind Macro CD technology and the opportunity for reducing number of sites for SPC, along with providing enhanced-sensitivity CD metrics.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin D. Bunday, Di K. Michelson, John A. Allgair, Aviram Tam, David Chase-Colin, Asaf Dajczman, Ofer Adan, and Michael Har-Zvi "CD SEM metrology macro CD technology: beyond the average", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005);

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